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学术报告:Advanced Low Power Spintronic Memories beyond STT-MRAM

      题: Advanced Low Power Spintronic Memories beyond STT-MRAM

  人:康旺(北京航空航天大学)
      2017525日上午9:30

      点:信息工程学院二层大会议室

   位: 首都师范大学信息工程学院

主讲学者简介:

康旺,北京航空航天大学博士后。获得北京航空航天大学微电子学博士学位,以及法国南巴黎大学物理学第二博士学位。主要研究基于自旋电子学的非易失性存储与逻辑芯片,以及脑机智能系统。在相关领域已发表国际期刊和会议论文70余篇(第一作者SCI期刊论文24篇,包括Proc. IEEE, IEEE EDL, IEEE TED, IEEE TC, IEEE TCAS-I, IEEE TNANO, IEEE TMAG, Scientific Reports, Nanotechnology等;第一作者国际会议论文12篇,邀请报告4个;申请发明专利12项,已授权4项), 被引用470余次(Google Scholar)。担任Nature, IEEE, IET, Springer,ACM等多种学术期刊和会议的评审。

 

内容介绍:Until now, spin transfer torque magnetic random access memory (STT-MRAM) has drawn considerable R&D interest worldwide. A number of companies and universities are currently involved in this promising technology. In 2016, Everspin released the first 256M STT-MRAM chip, indicating the commercialization and application of STT-MRAM. Nevertheless, STT-MRAM still has some intrinsic limitations, such as dynamic write power and speed, compared with CMOS-based memory technologies. Following the technical evolution process from toggle-MRAM to STT-MRAM, the continuous pursuit of high performance, high density, low power and scalability, drives the intensive R&D of new memory technologies. In this talk, we will show the recent progress in advanced spintronic memories beyond STT-MRAM, such as the spin Hall effect (SHE)-driven and voltage-driven MRAMs. These advanced MRAM technologies do have some unique advantages compared with STT-MRAM, but they also suffer from new design and fabrication challenges. In addition, we will present the latest research in emerging spintronic objects, e.g., magnetic skyrmions, which are potential as information carriers in future spintronic memories, e.g., racetrack memory and neuromorphics.